Electrical transport properties of highly doped N-type GaN materials
نویسندگان
چکیده
Abstract This paper presents a comparative study of electron transport phenomena in n-type gallium nitride strongly doped, above the Mott transition, with silicon and germanium. The samples under were grown by molecular beam epitaxy, metal-organic vapor phase epitaxy halide epitaxy. temperature dependence resistivity Hall Effect was investigated at temperatures ranging from 10 K up to 650 K. measurements sub-room allow scattering mechanisms related extrinsic material properties. observed dependences electrical properties analyzed frame model taking into account typical mechanism degree degeneracy free carrier gas. limitations applied models will be presented.
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2022
ISSN: ['0268-1242', '1361-6641']
DOI: https://doi.org/10.1088/1361-6641/ac5e01